DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. PD - 95164 IRF7105PbF HEXFET® Power MOSFET N-CHANNEL MOSFET 1 8 2 7 3 6 4 5 P-CHANNEL MOSFET Top View D1 N-Ch P-Ch D1 VDSS D2 25V -25V D2 RDS(on) 0.10Ω 0.25Ω ID 3.5A -2.3A SO-8 ABSOLUTE MAXIMUM RATINGS
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel P-Channel 3.5 -2.3 2.8 -1.8 14 -10 2.0 0.016 ± 20 3.0 -3.0 -55 to + 150 Units A W W/°C V V/nS °C Thermal Resistance Ratings RθJA Parameter Maximum Junction-to-Ambient Min. Typ.
International Rectifier
