DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. S1 G1 S2 G2 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. PD - 95164 IRF7105PbF HEXFET® Power MOSFET N-CHANNEL MOSFET 18 27 36 45 P-CHANNEL MOSFET Top View D1 N-Ch P-Ch D1 VDSS D2 25V -25V D2 RDS(on) 0.10Ω 0.25Ω ID 3.5A -2.3A SO-8 ABSOLUTE MAXIMUM RATINGS
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max.
International Rectifier
