IRF7240 Datasheet PDF | International Rectifier

International Rectifier IRF7240

This benefit provides the designer with an S 3 extremely efficient device for use in battery and load G 4 management applications.. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

Part No.	IRF7240
Datasheet	IRF7240 Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

DESCRIPTION

S 1 These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to S 2 achieve the extremely low on-resistance per silicon area. A 8 D 7 D 6 D 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8

ABSOLUTE MAXIMUM RATINGS

VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -40 -10.5 -8.6 -43 2.5 1.6 20 ± 20 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient Max. 50 Units °C/W 1 06/06/05 IRF7240PbF Ele...