DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.050Ω 0.10Ω Top View SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter N-Channel ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation (PCB Mount)** Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 4.7 4.0 3.2 16 1.4 0.011 ± 20 6.9 -55 to + 150 -6.0 Max.
International Rectifier
