IRF7324 Datasheet PDF

DESCRIPTION

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. T o p V ie w SO-8

ABSOLUTE MAXIMUM RATINGS

Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -9.0 -7.1 -71 2.0 1.3 16 ± 12 -55 to + 150 Units V A W W mW/°C V °C Thermal Resistance Parameter RθJA Max. Units 62.5 °C/W Maximum Junction-to-Ambient ƒ 1 6/26/00 IRF7324

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.