International Rectifier IRF7380PBF
Power MOSFET
| Part No. | IRF7380PBF |
|---|---|
| Datasheet | IRF7380PBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters l Lead-Free IRF7380PbF VDSS 80V HEXFET® Power MOSFET RDS(on) max ID :73m @VGS = 10V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S1 G1 S2 G2 18 27 36 45 Top View D1 D1 D2 D2 SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor hPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead fJunction-to-Ambient (PCB Mount) Max. 80 ± 20 3.6 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V A W W/°C V/ns °C Typ. ––– ––– Max. 42 62.5 Units °C/W Notes through are on page 8 1 © 2013 International Rectifier September 16, 2013 IRF7380PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
