International Rectifier IRF7474
HEXFET Power MOSFET
| Part No. | IRF7474 |
|---|---|
| Datasheet | IRF7474 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterruptible Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 63mΩ@VGS = 10V ID 4.5A S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 4.5 3.6 36 2.5 0.02 ± 20 5.5 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max.
