International Rectifier IRFIB6N60A
Power MOSFET
| Part No. | IRFIB6N60A |
|---|---|
| Datasheet | IRFIB6N60A Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l IRFIB6N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.5A TO-220 FULLPAK G DSABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.5 3.5 37 60 0.48 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Single Transistor Forward...
