IRFR9310 Datasheet | IRF

PD 9.1663 PRELIMINARY l l l l l l IRFR/U9310 HEXFET® Power MOSFET P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -400V RDS(on) = 7.0Ω ID = -1.8A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase,...