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IRFR9310 - Power MOSFET

Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.

Features

  • A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE.

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Datasheet Details

Part number IRFR9310
Manufacturer IRF
File Size 116.79 KB
Description Power MOSFET
Datasheet download datasheet IRFR9310 Datasheet

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Full PDF Text Transcription

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PD 9.1663 PRELIMINARY l l l l l l IRFR/U9310 HEXFET® Power MOSFET D P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -400V G S RDS(on) = 7.0Ω ID = -1.8A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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