IRFR9310 Description
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor...
IRFR9310 Key Features
- Advanced process technology
- Fully avalanche rated
- Surface-mount (IRFR9310, SiHFR9310)
- Straight lead (IRFU9310, SiHFU9310)
- P-channel
- Fast switching
- Material categorization: for definitions of pliance please see .vishay./doc?99912