IRFR9310PBF Description
l l IRFR9310PbF IRFU9310PbF D HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.0Ω S G ID = -1.8A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and...
IRFR9310PBF Key Features
- Straight Lead (IRFU9310)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated