International Rectifier IRG4BC10S
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | IRG4BC10S |
|---|---|
| Datasheet | IRG4BC10S Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Extremely low voltage drop; 1.1V typical at 2A● S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper
APPLICATIONS
● Very Tight Vce(on) distribution● Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits
● Generation 4 IGBTs offer highest efficiency available
● IGBTs optimized for specified application conditions
● Lower conduction losses than many Power MOSFET''s TO-220AB
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PDTC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
