• Part: IRG4BC20F
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: IRF
  • Size: 161.56 KB
Download IRG4BC20F Datasheet PDF
IRF
IRG4BC20F
IRG4BC20F is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
- 91602A INSULATED GATE BIPOLAR TRANSISTOR Features - Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - Industry standard TO-220AB package Fast Speed IGBT VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits - Generation 4 IGBTs offer highest efficiency available - IGBTs optimized for specified application conditions - Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR...