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IRG4BC20KD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4BC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20K-SPBF Short Circuit Rated UltraFast IGBT
IRG4BC20FD-SPBF INSULATED GATE BIPOLAR TRANSISTOR
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PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-channel density motor controls possible. •HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.