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IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-channel Benefits.
  • As a Freewheeling Diode we recommend our.

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Datasheet Details

Part number IRG4BC20K
Manufacturer IRF
File Size 138.38 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC20K Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 91600A IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.