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PD - 94906
IRG4BC20FDPbF
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.
IRG4BC20FDPBF Datasheet
