IRG4BC20FDPBF Datasheet | International Rectifier

.. - 94906 Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free Fast CoPack IGBT VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits...