IRG4BC20K-S
IRG4BC20K-S is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
- 91620A
INSULATED GATE BIPOLAR TRANSISTOR
Features
- High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
- bines low conduction losses with high switching speed
- Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
Short Circuit Rated UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A n-channel
Benefits
- As a Freewheeling Diode we remend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT
- Latest generation 4 IGBTs offer highest power density motor controls...
