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IRG4BC20K-S Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD - 91620A IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC20K-S datasheet preview

Datasheet Details

Part number	IRG4BC20K-S
Manufacturer	IRF
File Size	162.34 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC20K-S_IRF.pdf

Key Features

High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
Combines low conduction losses with high switching speed.
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-channel Benefits.
As a Freewheeling Diode we recommend our.

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