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IRG4BC20KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

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PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Latest generation 4 IGBTs offer highest power density controls possible • HEXFREDTM diodes optimized for performance with IGBTs.