• Part: IRG4BC20KD-S
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: IRF
  • Size: 222.97 KB
Download IRG4BC20KD-S Datasheet PDF
IRF
IRG4BC20KD-S
IRG4BC20KD-S is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
PD -91598A Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT VCES = 600V - Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard D2Pak package VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits - Latest generation 4 IGBTs offer highest power density motor...