IRG4BC20MD-S Datasheet | IRF

PD -94116 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - Rugged: 10µsec short circuit capable at VGS=15V - Low VCE(on) for 4 to 10k Hz applications - IGBT Co-packaged with ultra-soft-recovery antiparallel diode - Industry standard D2Pak package Short Circuit Rated Fast IGBT VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 11A Benefits - Offers highest efficiency and short circuit capability for intermediate applications - Provides best efficiency for the mid range frequency (4 to 10k Hz) - Optimized for Appliance Motor Drives, Industrial (Short Circuit Proof) Drives and Intermediate Frequency Range Drives - High noise immune "Positive Only" gate drive Negative bias gate drive not necessary - For Low EMI designs- requires little or no snubbing - Single Package switch for bridge circuit applications - patible with high voltage Gate Driver IC's - Allows simpler gate drive n-cha nn...