Full PDF Text Transcription for IRG4BC20MD-SPBF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRG4BC20MD-SPBF. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD -95564 IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=...
View more extracted text
RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package • Lead-Free C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.