IRG4BC20MD-SPBF Datasheet | International Rectifier

.. PD -95564 IRG4BC20MD-SPb F INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - Rugged: 10µsec short circuit capable at VGS=15V - Low VCE(on) for 4 to 10k Hz applications - IGBT Co-packaged with ultra-soft-recovery antiparallel diode - Industry standard D2Pak package - Lead-Free Short Circuit Rated Fast IGBT VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 11A Benefits - Offers highest efficiency and short circuit capability for intermediate applications - Provides best efficiency for the mid range frequency (4 to 10k Hz) - Optimized for Appliance Motor Drives, Industrial (Short Circuit Proof) Drives and Intermediate Frequency Range Drives - High noise immune "Positive Only" gate drive Negative bias gate drive not necessary - For Low EMI designs- requires little or no snubbing - Single Package switch for bridge circuit applications - patible with high voltage Gate Driver IC's - Allows simpler gate drive Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C tsc IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Short Circuit Withstand Time Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. n-channel D2Pak...