Full PDF Text Transcription for IRG4BC20MD (Reference)
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IRG4BC20MD. For precise diagrams, and layout, please refer to the original PDF.
PD -94115 IRG4BC20MD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 t...
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Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.
IRG4BC20MD Datasheet
