International Rectifier IRG4PH40U
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | IRG4PH40U |
|---|---|
| Datasheet | IRG4PH40U Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode● New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
● Optimized for power conversion; SMPS, UPS and welding
● Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-channel Benefits
● Higher switching frequency capability than competitive IGBTs
● Highest efficiency available
● Much lower conduction losses than MOSFETs
● More efficient than short circuit rated IGBTs TO-247AC
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
