IRGPC40M Datasheet | IRF

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1078 INSULATED GATE BIPOLAR TRANSISTOR Features - Short circuit rated - 10µs @ 125°C, V GE = 15V - Switching-loss rating includes all "tail" losses - Optimized for medium operating frequency (1 to 10kHz) Short Circuit Rated Fast IGBT VCES = 600V VCE(typ) ≤ 2.0V @VGE = 15V, I C = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage,...