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IRGPC40U Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: IRF

Overview: Previous Datasheet Index Next Data Sheet PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR.

Datasheet Details

Part number IRGPC40U
Manufacturer IRF
File Size 248.55 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Download IRGPC40U Download (PDF)

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, highcurrent applications.

TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 20A n-channel.