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IRGPC40UD2 Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: IRF

Overview: Previous Datasheet Index Next Data Sheet PD - 9.808A IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Datasheet Details

Part number IRGPC40UD2
Manufacturer IRF
File Size 421.20 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Download IRGPC40UD2 Download (PDF)

General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.

They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.

Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.

Key Features

  • Switching-loss rating includes all "tail" losses TM.