IRGPC40S - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPC40S

Datasheet Details

Part number	IRGPC40S
Manufacturer	IRF
File Size	251.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPC40S Datasheet
Additional preview pages of the IRGPC40S datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 1.8V @VGE = 15V, IC = 31A n-channel.

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Published: Aug 23, 2005 |