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IRGPH40 - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Details

Part number IRGPH40
Manufacturer IRF
File Size 255.03 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH40 Datasheet

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Overview

Previous Datasheet Index Next Data Sheet PD - 9.764 IRGPH40F INSULATED GATE BIPOLAR.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, I C = 17A n-channel.