IRGPH40S - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPH40S

Datasheet Details

Part number	IRGPH40S
Manufacturer	IRF
File Size	82.91 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH40S Datasheet
Additional preview pages of the IRGPH40S datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) ≤ 3.0V @VGE = 15V, IC = 20A n-channel.

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Published: Aug 23, 2005 |