International Rectifier RIC7S113
RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100 krad(Si) and single effect effects (SEE) characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. The high gate drive strength, low propagation delay and matching timing for high and low side drive help reduce loss in the power switch.| Part No. | RIC7S113 |
|---|---|
| Datasheet | RIC7S113 Download |
| Manufacturer |  International Rectifier |
| Description | Radiation hardened high and low side gate driver |
| Buy | Stock & Price |
FEATURES
● Independent high and low side gate driver● Independent bias supply for logic and power with ±5V offset
● Wide bias supply voltage range
● Undervoltage lockout for both channels
● CMOS Schmitt trigger inputs with internal pull-down resistor
● Integrated level shift for high side drive
● Cycle by cycle edge triggered shutdown logic pin
● Matched propagation delay for both channels
● Hermetically sealed package
● Lightweight
● Total ionizing dose (TID) hardness o High dose rate (50-300 rad(Si)/s) of 100 krad(Si)
● Single event effect (SEE) hardness o Safe operating area (SOA) defined for no SEB, SEGR up to LET of 81.9 MeV●cm2/mg o SET characterized up to LET of 81.9 MeV●cm2/mg Product summary
● VOFFSET (max) = 400 V
● VCC = 10 V to 20 V
● VDD = 5 V to 20 V
● IOUTA/B source/sink (typ) = 2 A / -2 A
● ton (typ) = 120 ns
● toff (typ) = 100 ns
● MT (typ) = 5 ns
● TJ = -55°C to 125°C Package Flatpack Potential applications
● Satellite bus and payload
● Power conditioning unit
● Powe...
