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IS42S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

General Description

ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524

Key Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Two banks can be operated simultaneously and independently.
  • Dual internal bank controlled by A11 (bank select).
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • 4096 refresh cycles every 64 ms.

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📁 Similar Datasheet

Part Number Description Manufacturer
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM Integrated Silicon Solution
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42S16128 128K words x 16 Bits x 2 Banks SDRAM Integrated Silicon
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S16160B 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S16100A1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42S16100H 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16160C 256Mb Single Data Rate Synchronous DRAM
IS42S16160G 256Mb SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.