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IS42S16400B1 Datasheet 1 Meg Bits X 16 Bits X 4 Banks (64-mbit) Synchronous Dynamic Ram

Manufacturer: ISSI (now Infineon)

Overview: IS42S16400B1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC.

General Description

S A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe mand Column Address Strobe mand WE LDQM UDQM VDD GND VDDQ GNDQ NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for DQ Pin Ground for DQ Pin No Connection Copyright © 2003 Integrated Silicon Solution, Inc.

All rights reserved.

ISSI reserves the right to make changes to this specification and its products at any time without notice.

Key Features

  • Clock frequency: 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 64 ms.
  • Random column address every clock cycle.
  • Programma.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42S16400B 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400 1M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400 (IS42S8800x/ IS42S16400x) 2M x 8-Bit x 4-Bank SDRAM
IS42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C 64M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400C1 1M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400J SYNCHRONOUS DYNAMIC RAM
IS42S16400L (IS42S8800x/ IS42S16400x) 2M x 8-Bit x 4-Bank SDRAM
IS42S16100A1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16400B1 Distributor