IS42S16400B1 - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Product Overview

ISSI

Datasheet Details

Part number	IS42S16400B1
Manufacturer	ISSI
File Size	468.71 KB
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet	IS42S16400B1 Datasheet
Additional preview pages of the IS42S16400B1 datasheet.

Product details

Description

A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM VDD GND VDDQ GNDQ NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for DQ Pin Ground for DQ Pin No Connection Copyright © 2003 Integrated Silicon Solution, Inc.All rights reserved.ISSI reserves the right to make changes to this specification

Features

Clock frequency: 133 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single 3.3V power supply.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Self refresh modes.
4096 refresh cycles every 64 ms.
Random column address every clock cycle.
Programma.

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Other Datasheets by ISSI

IS42S16400B - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400 - 1M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400A - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C - 64M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400C1 - 1M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400J - SYNCHRONOUS DYNAMIC RAM

Published: Oct 26, 2005 |