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IS42S16400 - 1M-Bit x 16-Bit 4 4-Bank SDRAM

General Description

A0-A11 BA0, BA1 I/O0 to I/O15 CLK CKE CS RAS CAS m o .c U 4 t e e h S a t a .D w w w 54-Pin TSOP (Type II) VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 1 2 3 4 5 6 7 8 9 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VCCQ GNDQ VCCQ 10 11 12 13 14 15 16 17 18 19 20

Key Features

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S16400 om c . 1 Meg Bits x 16 UBits x 4 Banks (64-MBIT) FINAL PRODUCTION 4 t SYNCHRONOUS DYNAMIC RAM MAY 2001 e e FEATURES h OVERVIEW S ISSI's 64Mb Synchronous DRAM IS42S16400 is organized • Clock frequency: 166, 133, 100 MHz a as 1,048,576 bits x 16-bit x 4-bank for improved t • Fully synchronous; all signals referenced to a a performance. The synchronous DRAMs achieve high-speed positive D clock edge data transfer using pipeline architecture. All inputs and . outputs signals refer to the rising edge of the clock input. • Internal bank for hiding row access/precharge w w 3.