IS42S16400 - SYNCHRONOUS DYNAMIC RAM

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS42S16400
Manufacturer	Integrated Silicon Solution
File Size	583.66 KB
Description	SYNCHRONOUS DYNAMIC RAM
Datasheet	IS42S16400 Datasheet
Additional preview pages of the IS42S16400 datasheet.

Product details

Description

A0-A11 BA0, BA1 I/O0 to I/O15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM Vcc GND Vcc Q GNDQ NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection This document contains TARGET SPECIFICATION data.ISSI reserves the right to make changes to its products at any time without no

Features

Clock frequency: 166, 133, 100 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single 3.3V power supply.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Self refresh modes.
4096 refresh cycles every 64 ms.
Random column address every clock cycle.

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Other Datasheets by Integrated Silicon Solution

IS42S16400D - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
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Published: Nov 20, 2006 |