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IS42S16400F - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Download the IS42S16400F datasheet PDF. This datasheet also covers the IS45S16400F variant, as both devices belong to the same 1 meg bits x 16 bits x 4 banks (64-mbit) synchronous dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits.

Internally configured as a quad-bank DRAM with a synchronous interface.

Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits.

Key Features

  • Clock frequency: 200, 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • Auto refresh (CBR).
  • 4096 refresh cycles every 64 ms (Com, Ind, A1 g.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS45S16400F_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42S16400F IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.