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IS42S16400C1 - 1M-Bit x 16-Bit 4 4-Bank SDRAM

General Description

A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS m o .c U 4 t e e h S a t a .D w w w PIN CONFIGURATIONS 54-Pin TSOP (Type II) VDD DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 1 2 3 4 5 6 7 8 9 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 GND VDDQ GNDQ VDDQ 10 11 12 13 14 15 16

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Part Number Description Manufacturer
IS42S16400 SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42S16400D 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM Integrated Silicon Solution
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S16400C 64M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400 1M-Bit x 16-Bit 4 4-Bank SDRAM
IS42S16400 (IS42S8800x/ IS42S16400x) 2M x 8-Bit x 4-Bank SDRAM
IS42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400B 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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m IS42S16400C1 o .c UBits x 4 Banks (64-MBIT) 1 Meg Bits x 16 4 OCTOBER 2005 t e SYNCHRONOUS DYNAMIC RAM e h S a FEATURES OVERVIEW t a ISSI's 64Mb Synchronous DRAM IS42S16400C1 is • Clock frequency: 166, 143 MHz D organized as 1,048,576 bits x 16-bit x 4-bank for improved . synchronous; all signals referenced to a • Fully performance. The synchronous DRAMs achieve high-speed w clock edge positive data transfer using pipeline architecture. All inputs and w outputs signals refer to the rising edge of the clock input. bank for hiding row access/precharge w•• Internal Single 3.