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IS42SM32200G - 512K x 32Bits x 4Banks Low Power Synchronous DRAM

General Description

These IS42SM32200G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Key Features

  • JEDEC standard 3.3V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle y / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength.
  • Deep Power Down Mode Mode.
  • All in.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42SM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32160C 512Mb Mobile Synchronous DRAM

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IS42SM32200G 512K x 32Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM32200G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features ƒ JEDEC standard 3.3V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle y / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.