• Part: IS43DR32160C
  • Description: 16Mx32 512Mb DDR2 DRAM
  • Manufacturer: ISSI
  • Size: 706.28 KB
Download IS43DR32160C Datasheet PDF
ISSI
IS43DR32160C
IS43DR32160C is 16Mx32 512Mb DDR2 DRAM manufactured by ISSI.
IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM Features - Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V - JEDEC standard 1.8V I/O (SSTL_18-patible) - Double data rate interface: two data transfers per clock cycle - Differential data strobe (DQS, DQS) - 4-bit prefetch architecture - On chip DLL to align DQ and DQS transitions with CK - 4 internal banks for concurrent operation - Programmable CAS latency (CL) 3, 4, 5, and 6 supported - Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported - WRITE latency = READ latency - 1 t CK - Programmable burst lengths: 4 or 8 - Adjustable data-output drive strength, full and reduced strength options - On-die termination (ODT) OPTIONS - Configuration: 16M x 32 (IS43/46DR32160C - 8K refresh) - Package: x32: 126-ball WBGA - Timing - Cycle time 2.5ns @CL=6, DDR2-800E 3.0ns @CL=5, DDR2-667D 3.75ns @CL=4, DDR2-533C 5.0ns @CL=3, DDR2-400B - Temperature Range: mercial (0°C ≤ Tc ≤ 85°C; 0°C ≤ Ta ≤ 70°C) Industrial (- 40°C ≤ Tc ≤ 95°C; - 40°C ≤ Ta ≤ 85°C) Automotive, A1 (- 40°C ≤ Tc ≤ 95°C; - 40°C ≤ Ta ≤ 85°C) Automotive, A2 (- 40°C ≤ Tc ≤ 105°C; - 40°C ≤ Ta ≤ 105°C) Tc = Case Temp, Ta = Ambient Temp NOVEMBER 2013 DESCRIPTION...