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IS43LR32800H Datasheet 2M x 32Bits x 4Banks Mobile DDR SDRAM

Manufacturer: ISSI (now Infineon)

Download the IS43LR32800H datasheet PDF. This datasheet also includes the IS46LR32800H variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS46LR32800H-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The IS43/46LR32800H is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

The Data Input/ Output signals are transmitted on a 32-bit bus.

Overview

IS43/46LR32800H 2M x 32Bits x 4Banks Mobile DDR SDRAM.

Key Features

  • JEDEC standard 1.8V power supply.
  • VDD = 1.8V, VDDQ = 1.8V.
  • Four internal banks for concurrent operation.
  • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
  • Fully differential clock inputs (CK, /CK).
  • All inputs except data & DM are sampled at the rising edge of the system clock.
  • Data I/O transaction on both edges of data strobe.
  • Bidirectional d.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS43LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32800G 2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32100C 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS43LR32100D 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS43LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32200C 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32320B 8M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32320C 1Gb Mobile DDR SDRAM