IS43TR16512A Datasheet PDF - ISSI 512M x 16 8Gb DDR3 SDRAM Specs

IS43TR16512A - 512M x 16 8Gb DDR3 SDRAM

This page provides the datasheet information for the IS43TR16512A, a member of the IS46TR16512A 512M x 16 8Gb DDR3 SDRAM family.

Datasheet Summary

Features

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V.
High speed data transfer rates with system frequency up to 933 MHz.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Length: 4 and 8.
Programmable Burs.

Datasheet Details

Part number	IS43TR16512A
Manufacturer	ISSI
File Size	3.05 MB
Description	512M x 16 8Gb DDR3 SDRAM
Datasheet	IS43TR16512A Datasheet
Additional preview pages of the IS43TR16512A datasheet.

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Full PDF Text Transcription

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IS43/46TR16512A, IS43/46TR16512AL 512Mx16 8Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) OPTIONS  Configuration: 512Mx16(dual die)  Package: 96-ball BGA (10mm x 14mm) ADDRESS TABLE FEBRUARY 2018  Refresh Interval: 7.

Published: Oct 8, 2018 |