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IS43TR16512AL - 512M x 16 8Gb DDR3 SDRAM

Download the IS43TR16512AL datasheet PDF. This datasheet also covers the IS46TR16512A variant, as both devices belong to the same 512m x 16 8gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 933 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46TR16512A-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46TR16512A, IS43/46TR16512AL 512Mx16 8Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) OPTIONS  Configuration: 512Mx16(dual die)  Package: 96-ball BGA (10mm x 14mm) ADDRESS TABLE FEBRUARY 2018  Refresh Interval: 7.