IS43TR16512BL Datasheet PDF - ISSI 8Gb DDR3 SDRAM Specs

IS43TR16512BL - 8Gb DDR3 SDRAM

This page provides the datasheet information for the IS43TR16512BL, a member of the IS46TR16512B 8Gb DDR3 SDRAM family.

Datasheet Summary

Description

RAS#.

CAS#.

Features

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
High speed data transfer rates with system frequency up to 933 MHz.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Le.

Datasheet Details

Part number	IS43TR16512BL
Manufacturer	ISSI
File Size	3.73 MB
Description	8Gb DDR3 SDRAM
Datasheet	IS43TR16512BL Datasheet
Additional preview pages of the IS43TR16512BL datasheet.

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Full PDF Text Transcription

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IS43/46TR16512B, IS43/46TR16512BL, IS43/46TR81024B, IS43/46TR81024BL 1Gx8, 512Mx16 8Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture • Programmable CAS Latency • Programmable Additive Latency: 0, CL-1,CL-2 • Programmable CAS WRITE latency (CWL) based on tCK • Programmable Burst Length: 4 and 8 • Programmable Burst Sequence: Sequential or Interleave • BL switch on the fly • Auto Self Refresh(ASR) • Self Refresh Temperature(SRT) JANUARY 2024 • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.

Published: Feb 19, 2024 |