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IS45S16100F Datasheet 512k Words X 16 Bits X 2 Banks 16mb Sdram

Manufacturer: ISSI (now Infineon)

Overview: IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

ISSI’s 16Mb Synchronous DRAM IS42S16100F, IS45S16100F and IS42VS16100F are each organized as a 524,288-word x 16-bit x 2-bank for improved performance.

The synchronous DRAMs achieve highspeed data transfer using pipeline architecture.

All inputs and outputs signals refer to the rising edge of the clock input.

Key Features

  • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Two banks can be operated simultaneously and independently.
  • Dual internal bank controlled by A11 (bank select).
  • Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.8V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S16100H 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160G 256Mb SYNCHRONOUS DRAM
IS45S16160J 256Mb SYNCHRONOUS DRAM
IS45S16160L 256Mb SYNCHRONOUS DRAM
IS45S16320D 512Mb SDRAM
IS45S16320F 512Mb SDRAM
IS45S16400J SYNCHRONOUS DYNAMIC RAM
IS45S16800F 128Mb SYNCHRONOUS DRAM
IS45S32160B 512Mb SYNCHRONOUS DRAM
IS45S32160B 512Mb SYNCHRONOUS DRAM

IS45S16100F Distributor