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IS45S16100E

Manufacturer: ISSI (now Infineon)

IS45S16100E datasheet by ISSI (now Infineon).

IS45S16100E datasheet preview

IS45S16100E Datasheet Details

Part number IS45S16100E
Datasheet IS45S16100E_IntegratedSiliconSolution.pdf
File Size 1.07 MB
Manufacturer ISSI (now Infineon)
Description 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16100E page 2 IS45S16100E page 3

IS45S16100E Overview

IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010.

IS45S16100E Key Features

  • Clock frequency: 200, 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
  • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • 2048 refresh cycles every 32ms (, Ind, A1 grade) or 16ms (A2 grade)

IS45S16100F from other manufacturers

View IS45S16100F datasheet index

Brand Logo Part Number Description Other Manufacturers
ISSI Logo IS45S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM ISSI
ISSI Logo IS45S16100H 16Mb SYNCHRONOUS DYNAMIC RAM ISSI
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

View all ISSI (now Infineon) datasheets

Part Number Description
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16800E 128Mb SYNCHRONOUS DRAM
IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM
IS45S81600E 128Mb SYNCHRONOUS DRAM

IS45S16100E Distributor

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