IS45S16100H Datasheet | ISSI

FEATURES - Clock frequency: 200, 166, 143 MHz - Fully synchronous; all signals referenced to a positive clock edge - Two banks can be operated simultaneously and independently - Dual internal bank controlled by A11 (bank select) - Single 3.3V power supply - LVTTL interface - Programmable burst length - (1, 2, 4, 8, full page) - Programmable burst sequence: Sequential/Interleave - 2048 refresh cycles every 32ms (, Ind, A1 grade) or 16ms (A2 grade) - Random column address every clock cycle - Programmable CAS latency (2, 3 clocks) - Burst read/write and burst read/single write operations capability - Burst termination by burst stop and precharge mand - Byte controlled by LDQM and UDQM - Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA - Temperature Grades: mercial (0o C to +70o C) Industrial (-40o C to +85o C) Automotive A1 (-40o C to +85o C) Automotive A2 (-40o C to +105o C) DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42/4516100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. Copyright © 2023 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not remend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated...