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IS45S16100C1

Manufacturer: ISSI (now Infineon)

IS45S16100C1 datasheet by ISSI (now Infineon).

IS45S16100C1 datasheet preview

IS45S16100C1 Datasheet Details

Part number IS45S16100C1
Datasheet IS45S16100C1_IntegratedSiliconSolution.pdf
File Size 893.07 KB
Manufacturer ISSI (now Infineon)
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1 page 2 IS45S16100C1 page 3

IS45S16100C1 Overview

ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

IS45S16100C1 Key Features

  • Clock frequency: 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
  • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • 4096 refresh cycles every 64 ms
ISSI (now Infineon) logo - Manufacturer

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View all ISSI (now Infineon) datasheets

Part Number Description
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
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IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16800E 128Mb SYNCHRONOUS DRAM
IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM
IS45S81600E 128Mb SYNCHRONOUS DRAM

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