IS45S16100C1 Datasheet | ISSI

FEATURES - Clock frequency: 143 MHz - Fully synchronous; all signals referenced to a positive clock edge - Two banks can be operated simultaneously and independently - Dual internal bank controlled by A11 (bank select) - Single 3.3V power supply - LVTTL interface - Programmable burst length - (1, 2, 4, 8, full page) - Programmable burst sequence: Sequential/Interleave - 4096 refresh cycles every 64 ms - Random column address every clock cycle - Programmable CAS latency (2, 3 clocks) - Burst read/write and burst read/single write operations capability - Burst termination by burst stop and precharge mand - Byte controlled by LDQM and UDQM - Automotive Temperature Range Option A: 0o C to +70o C Option A1: -40o C to +85o C - Packages: 400-mil 50-pin TSOP-II, 60-ball f BGA - Lead-free package option .. ISSI JANUARY 2006 ® DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. PIN CONFIGURATIONS 50-Pin TSOP (Type II) VDD DQ0 DQ1 GNDQ DQ2 DQ3 VDDQ DQ4 DQ5 GNDQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 GND DQ15 IDQ14 GNDQ DQ13 DQ12 VDDQ DQ11 DQ10 GNDQ DQ9 DQ8 VDDQ NC UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 GND PIN DESCRIPTIONS A0-A11 A0-A10 A11 A0-A7 DQ0 to DQ15 CLK CKE CS RAS Address Input Row Address Input Bank Select Address Column Address Input Data DQ System Clock Input Clock Enable Chip Select Row Address Strobe mand CAS WE LDQM UDQM VDD GND VDDQ GNDQ NC Column Address Strobe mand Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for DQ Pin Ground for DQ Pin No Connection Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved....