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IS46LD16128B - 2Gb Mobile LPDDR2 S4 SDRAM

General Description

The IS43/46LD16128B/32640B is 2Gbit CMOS LPDDR2 DRAM.

The device is organized as 8 banks of 16Meg words of 16bits or 8Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Key Features

  • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V.
  • High Speed Un-terminated Logic(HSUL_12) I/O Interface.
  • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O).
  • Four-bit Pre-fetch DDR Architecture.
  • Multiplexed, double data rate, command/address inputs.
  • Eight internal banks for concurrent operation.
  • Bidirectional/differential data strobe per byte of.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46LD16160A 256Mb Mobile LPDDR2 S4 SDRAM
IS46LD16160B 256Mb Mobile LPDDR2 S4 SDRAM
IS46LD16320A 512Mb Mobile LPDDR2 S4 SDRAM
IS46LD16640A 1Gb Mobile LPDDR2 S4 SDRAM
IS46LD16640C 1Gb Mobile LPDDR2 S4 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46LD16128B IS43/46LD32640B 2Gb (x16, x32) Mobile LPDDR2 S4 SDRAM JULY 2021 FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.