IS46LD16160B - 256Mb Mobile LPDDR2 S4 SDRAM

Product Overview

ISSI

Part number	IS46LD16160B
Manufacturer	ISSI
File Size	4.09 MB
Description	256Mb Mobile LPDDR2 S4 SDRAM
Datasheet	IS46LD16160B Datasheet
Additional preview pages of the IS46LD16160B datasheet.

The IS43/46LD16160B/32800B is 256Mbit CMOS LPDDR2 DRAM.

The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V.
High Speed Un-terminated Logic(HSUL_12) I/O Interface.
Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O).
Four-bit Pre-fetch DDR Architecture.
Multiplexed, double data rate, command/address inputs.
Four internal banks for concurrent operation.
Bidirectional/differential data strobe per byte of d.

IS46R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16800E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32400E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32800F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS41C16100 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Jul 15, 2024 |