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IS46R83200B - 256Mb DDR Synchronous DRAM

Download the IS46R83200B datasheet PDF. This datasheet also covers the IS43R83200B variant, as both devices belong to the same 256mb ddr synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Vdd =Vddq = 2.5V+0.2V (-5, -6, -75).
  • Double data rate architecture; two data transfers per clock cycle.
  • Bidirectional , data strobe (DQS) is transmitted/ received with data.
  • Differential clock input (CLK and /CLK).
  • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS.
  • Commands entered on each positive CLK edge;.
  • Data and data mask referenced to both edges of DQS.
  • 4 bank operation controlled by BA0 ,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS43R83200B-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM AUGUST 2010 FEATURES: • Vdd =Vddq = 2.5V+0.2V (-5, -6, -75) • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK) • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS • Commands entered on each positive CLK edge; • Data and data mask referenced to both edges of DQS • 4 bank operation controlled by BA0 , BA1 (Bank Address) • /CAS latency -2.0 / 2.5 / 3.