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IS61LV12816 - 128K x 16 HIGH-SPEED CMOS STATIC RAM

General Description

The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available ISSI.

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📁 Similar Datasheet

Part Number Description Manufacturer
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Circuit Solution
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IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS61LV12816LL 128K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS61LV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL 512K x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • • • • • High-speed access time: 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available ISSI DESCRIPTION ® FEBRUARY 2003 The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.